MMBT4403LT1
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= −10 Vdc, T
A
= 25°C; Bandwidth = 1.0 Hz
10
8
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 430
W
I
C
= 500
mA,
R
S
= 560
W
I
C
= 50
mA,
R
S
= 2.7 kW
I
C
= 100
mA,
R
S
= 1.6 kW
NF, NOISE FIGURE (dB)
10
f = 1 kHz
8
6
6
4
2
4
I
C
= 50
mA
100
mA
500
mA
1.0 mA
R
S
= OPTIMUM SOURCE RESISTANCE
2
0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
50 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C
This group of graphs illustrates the relationship between h
fe
and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
1000
700
500
hfe , CURRENT GAIN
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100 k
hie , INPUT IMPEDANCE (OHMS)
50 k
20 k
10 k
5k
2k
1k
500
200
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
30
0.1
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
hoe, OUTPUT ADMITTANCE (
m
mhos)
500
Figure 11. Input Impedance
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
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5
Figure 13. Output Admittance
ONSEMI [ ON SEMICONDUCTOR ]
