SFH 9202
Collector Current
Ι
C
Ι
C max
%
80
100
C
-
------------- =
f
(
d
)
I
I
Cmax
Permissible Power Dissipation for
Diode and Transistor
P
tot
=
f
(
T
A
)
P
tot
160
mW
OHL00945
Switching Characteristics
t
=
f
(
R
L
)
T
A
= 25
°C,
I
F
= 10 mA
10
3
t
μ
s
t
on
t
off
OHO01367
OHO02255
Total power dissipation
120
100
80
40
Detector
Emitter
60
10
2
60
40
20
Kodak neutral
white test card
Mirror
0
0
1
2
3
4 mm 5
d
20
0
10
1 0
10
0
20
40
60
80 ˚C 100
10
1
T
A
k
Ω
R
L
10
2
Max. Permissible Forward Current
I
F
=
f
(
T
A
)
I
F
120
mA
100
OHL00986
Transistor Capacitance (typ.)
C
CE
=
f
(
V
CE
),
T
A
= 25
°C,
f
= 1 MHz
20
C
CE
pF
15
OHO00496
Collector Current
I
C
=
f
(
I
F
), spacing
d
to reflector = 1 mm, 90% reflection
300
Ι
C
μ
A
OHO01324
80
200
60
10
40
100
5
V
CE
= 5 V
20
0
0
20
40
60
80 ˚C 100
T
A
0
-2
10
10
-1
10
0
10
1
V 10
2
V
CE
0
0
4
8
12
16 mA 20
Ι
F
Forward Voltage (typ.) of the
Diode
V
F
=
f
(
T
)
1.30
V
F
V
1.25
OHO02256
Relative Spectral Emission of
Emitter (GaAs)
I
rel
=
f
(λ)
and
Detector (Si)
S
rel
=
f
(λ)
100
Ι
rel
S
rel
%
80
OHO00786
Output Characteristics (typ.)
I
C
=
f
(
V
CE
), spacing to reflector:
d
= 1 mm, 90% reflection,
T
A
= 25
°C
0.6
OHO01326
Ι
C
mA
0.5
Ι
F
= 25 mA
Ι
F
= 20 mA
0.4
1.20
Ι
F
= 20 mA
10 mA
5 mA
60
Ι
F
= 15 mA
0.3
Detector
1.15
40
1.10
0.2
20
Ι
F
= 10 mA
1.05
0.1
Emitter
Ι
F
= 5 mA
1
-40
-20
0
20
40
60
C
T
100
0
700
800
900
1000 nm 1100
0
0.1
10
0
λ
10
1
V
V
CE
2007-04-03
6
OSRAM [ OSRAM GMBH ]
