Transistor
2SA1487
Silicon PNP epitaxial planer type
For video amplifier
5.9±0.2
Unit: mm
4.9±0.2
q
q
High transition frequency f
T
.
Small collector output capacitance C
ob
.
+0.3
+0.2
2.54±0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–85
–85
–4
–100
–50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
0.45
–0.1
1.27
1.27
13.5±0.5
0.7
–0.2
0.7±0.1
8.6±0.2
s
Features
0.45
–0.1
+0.2
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= –60V, I
B
= 0
I
C
= –100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= –100µA, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –5V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
500
2.7
–85
–85
–4
60
– 0.5
V
MHz
pF
min
typ
max
–10
Unit
µA
V
V
V
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
