Transistor
P
C
— Ta
1.2
60
Ta=25˚C
2SA1487
I
C
— V
CE
–120
V
CE
=–5V
–100
25˚C
Ta=75˚C
–80
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
1.0
50
Collector current I
C
(mA)
0.8
40
–400µA
–350µA
0.6
30
–300µA
–250µA
Collector current I
C
(mA)
I
B
=–500µA
–450µA
–60
0.4
20
–200µA
–150µA
–40
0.2
10
–100µA
–50µA
–20
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
I
C
/I
B
=10
240
h
FE
— I
C
1200
V
CE
=–5V
f
T
— I
E
V
CB
=–5V
f=200MHz
Ta=25˚C
Forward current transfer ratio h
FE
200
160
Transition frequency f
T
(MHz)
–10
–30
–100
1000
800
120
Ta=75˚C
80
25˚C
600
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
400
–25˚C
–25˚C
40
200
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
0
–1
–3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
Collector output capacitance C
ob
(pF)
5
I
E
=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
