Power F-MOS FETs
Area of safe operation (ASO)
100
30
10
t=1ms
3
1
0.3
100ms
0.1
0.03
0.01
1
3
10
30
100
300
1000
DC
10ms
60
2SK3049
P
D
Ta
10
(1) T
C
=Ta
(2) Without heat sink
IAS max.
IAS
L-load
T
C
=25˚C
Allowable power dissipation P
D
(W)
Non repetitive pulse
T
C
=25˚C
Avalanche current IAS (A)
50
3
62.5mJ
Drain current I
D
(A)
40
(1)
30
1
0.3
20
0.1
10
(2)
0
0
20
40
60
80 100 120 140 160
0.03
0.01
0.1
0.3
1
3
10
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
L-load (mH)
I
D
V
GS
V
DS
=25V
R
DS(on)
I
D
Drain to source ON-resistance R
DS(on)
(
Ω
)
2.5
5
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (S)
V
GS
=10V
V
DS
=25V
T
C
=0˚C
4
25˚C
100˚C
3
10
8
2.0
T
C
=100˚C
Drain current I
D
(A)
T
C
=100˚C
6
1.5
25˚C
1.0
0˚C
4
25˚C
0˚C
2
2
0.5
1
0
0
2
4
6
8
10
0
0
2
4
6
8
0
0
2
4
6
8
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
R
th(t)
t
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
