s
Electrical Characteristics (Ta=25˚C)
·
AN8045/AN8045M (4.5V Type)
Parameter
Output voltage
Line regulation
Load regulation
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
Condition
V
I
=5 to 10.5V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=4.3V, I
O
=20mA, T
j
=25˚C
V
I
=4.3V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=5.5 to 7.5V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
min
4.32
typ
4.5
4
11
23
0.07
0.12
0.7
max
4.68
50
35
45
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
54
66
85
0.23
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=5.5V, I
O
=20mA, C
O
=10µF
·
AN8005/AN8005M (5V Type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
V
I
=5.5 to 11V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=4.8V, I
O
=20mA, T
j
=25˚C
V
I
=4.8V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=6 to 8V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
52
Condition
min
4.8
typ
5
4.5
12
25
0.07
0.12
0.7
64
95
0.25
max
5.2
50
40
50
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=6V, I
O
=20mA, C
O
=10µF
·
AN8006/AN8006M (6V Type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
V
I
=6.5 to 12V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=5.8V, I
O
=20mA, T
j
=25˚C
V
I
=5.8V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=7 to 9V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
51
Condition
min
5.76
typ
6
5.5
13
28
0.07
0.13
0.7
63
105
0.3
max
6.24
60
45
55
0.2
0.3
1.2
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=7V, I
O
=20mA, C
O
=10µF
PANASONIC [ PANASONIC SEMICONDUCTOR ]
