UNR221x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance ratio UNR221M
UNR221N
UNR2218/2219
UNR221Z
UNR2214
UNR221T
UNR221F
UNR221V
UNR2211/2212/2213/221L
UNR221K
UNR221E
UNR221D
0.8
1.70
1.70
3.7
0.37
0.17
0.08
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.21
0.47
0.47
1.0
1.0
2.13
2.14
4.7
1.2
2.60
2.60
5.7
0.57
0.25
0.12
Max
Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR2210
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
10
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
1
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
20
10
0
0
1
10
100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00010CED
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
