3.0 mm
PHOTOTRANSISTOR
L-32ROPT1C
REV:A / 2
FEATURES
* WIDE RANGE COLLECTOR CURRENTS
* LENSED FOR HIGH SENSITIVITY
* HIGH OUTPUT POWER
* HIGH SPEED RESPONSE
* Pb FREE PRODUCTS
CHIP MATERIALS
* SILICON
ABSOLUTE MAXIMUM RATING : ( Ta = 25°C )
SYMBOL
P
D
V
(BR)CEO
Topr
Tstg
PARAMETER
Power Dissipation
Collector-Emitter Breakdown Voltage
Operating Temperature Range
Storage Temperature Range
MAX
10
30
UNIT
mW
V
-35°C to 85°C
-35°C to 85°C
Lead Soldering Temperature�½�1.6mm(0.063 inch) From Body�½�260°C for 5 Seconds
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
SYMBOL
PARAMETER
TEST
CONDITION
Ic = 100µA
Ee = 0 mw/cm
2
I
E
=100µA
Ee= 0 mw/cm
2
V
CE
=10V
Ee=0 mw/cm
2
I
C
=2mA
Ee=0.5 mw/cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
V
CE
=5V
Ee=0.1 mw/cm
2
MIN TYP MAX UNIT
30
5
100
0.4
15/15
4
940
V
V
nA
V
uS
mA
nm
BV
CEO
Collector-Emitter Breakdown Voltage
BV
ECO
I
CEO
V
CE(S)
T
R
/T
F
I
C
λ
P
Emitter-Collector Breakdown Voltage
Collector Dark Current
Collector-Emitter Saturation Voltage
Rise / Fall Time
On Stat Collector Current
Wavelength of Peak Sensitivity
Luminous Imtensity Measurement Allowance is
±10%
Color Coordinates Measurement Allowance is
±1nm
DRAWING NO. : DS-21-03-0009
DATE : 2005-12-19
Page : 3
HD-R/RD014
PARALIGHT [ PARA LIGHT ELECTRONICS CO., LTD. ]
