5.0 mm
FEATURES
* High reliability
* Low-voltage characteristics
* Narrow view angle
* Pb FREE Products
* RoHS Compliant
INFRARED
EMITTING
DIODE
REV:A / 1
L515EIR1C
CHIP MATERIALS
* Dice Material : GaAlAs/GaAs
* Lens Color : WATER CLEAR
ABSOLUTE MAXIMUM RATING : ( Ta = 25°C )
SYMBOL
P
D
V
R
I
F
I
PF
T
opr
T
stg
PARAMETER
Power Dissipation Per Chip
Reverse Voltage Per Chip
Forward Current Per Chip
Peak forward current Per Chip (F=1KHZ,duty=0.1)
Operating Temperature Range
Storage Temperature Range
MAX
160
5
100
400
UNIT
mW
V
mA
mA
-25°C to 85°C
-25°C to 85°C
IFP Condition : Pulse Width≤10msec, 10% duty cycle
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
SYMBOL
V
F
I
R
λ
P
2θ1/2
I
E
PARAMETER
Forward Voltage
Reverse Current
Peak Emission Wavelength
Half Intensity Angle
Radiant Intensity
TEST
CONDITION
I
F
= 20mA
I
F
= 100mA
V
R
= 5V
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
F
=100mA
940
25
24
120
MIN. TYP. MAX. UNIT
1.2
1.4
1.6
10
V
µA
nm
deg
mw/sr
DRAWING NO. : DS-23-09-0069
DATE : 2009-08-10
Page : 3
PARALIGHT [ PARA LIGHT ELECTRONICS CO., LTD. ]
