Philips Semiconductors
Product specification
Quad 2-input NAND gate
DC CHARACTERISTICS
Type 74HC00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
T
amb
=
−40
to +85
°C;
note 1
V
IH
HIGH-level input voltage
2.0
4.5
6.0
V
IL
LOW-level input voltage
2.0
4.5
6.0
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA
I
O
=
−20 µA
I
O
=
−20 µA
I
O
=
−4.0
mA
I
O
=
−5.2
mA
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA
I
O
= 20
µA
I
O
= 20
µA
I
O
= 4.0 mA
I
O
= 5.2 mA
I
LI
I
OZ
I
CC
input leakage current
V
I
= V
CC
or GND
3-state output OFF current V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
quiescent supply current
2.0
4.5
6.0
4.5
6.0
6.0
6.0
−
−
−
−
−
−
−
−
2.0
4.5
6.0
4.5
6.0
1.9
4.4
5.9
3.84
5.34
1.5
3.15
4.2
−
−
−
V
CC
(V)
MIN.
74HC00; 74HCT00
TYP.
MAX.
UNIT
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
−
−
−
−
0.5
1.35
1.8
−
−
−
−
−
0.1
0.1
0.1
0.33
0.33
±1.0
±.5.0
20
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
V
I
= V
CC
or GND; I
O
= 0 6.0
2003 Jun 30
6
PHILIPS [ NXP SEMICONDUCTORS ]
