Philips Semiconductors
Product specification
Quad 2-input NAND gate
AC CHARACTERISTICS
Type 74HC00
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF.
TEST CONDITIONS
SYMBOL
PARAMETER
WAVEFORMS
T
amb
=
−40
to +85
°C;
note 1
t
PHL
/t
PLH
propagation delay nA, nB to nY
see Fig.6
see Fig.6
see Fig.6
t
THL
/t
TLH
output transition time
2.0
4.5
6.0
2.0
4.5
6.0
T
amb
=
−40
to +125
°C
t
PHL
/t
PLH
propagation delay nA, nB to nY
see Fig.6
see Fig.6
see Fig.6
t
THL
/t
TLH
output transition time
2.0
4.5
6.0
2.0
4.5
6.0
Note
1. All typical values are measured at T
amb
= 25
°C.
Type 74HCT00
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF
TEST CONDITIONS
SYMBOL
PARAMETER
WAVEFORMS
T
amb
=
−40
to +85
°C;
note 1
t
PHL
/t
PLH
t
THL
/t
TLH
propagation delay nA, nB to nY
output transition time
see Fig.6
4.5
4.5
−
−
−
−
V
CC
(V)
−
−
−
−
−
−
−
−
−
−
−
−
V
CC
(V)
74HC00; 74HCT00
MIN.
TYP.
MAX.
UNIT
25
9
7
19
7
6
−
−
−
−
−
−
115
23
20
95
19
16
ns
ns
ns
ns
ns
ns
135
27
23
110
22
19
ns
ns
ns
ns
ns
ns
MIN.
TYP
MAX.
UNIT
12
−
−
−
24
29
ns
ns
T
amb
=
−40
to +125
°C
t
PHL
/t
PLH
t
THL
/t
TLH
Note
1. All typical values are measured at T
amb
= 25
°C.
propagation delay nA, nB to nY
output transition time
see Fig.6
4.5
4.5
29
22
ns
ns
2003 Jun 30
9
PHILIPS [ NXP SEMICONDUCTORS ]
