PLL521-23
Low Phase Noise PECL VCXO (100MHz to 200MHz)
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
Supply Voltage
Input Voltage, dc
Output Voltage, dc
Storage Temperature
Ambient Operating Temperature
Junction Temperature
Input Static Discharge Voltage Protection
SYMBOL
V
DD
V
I
V
O
T
S
T
A
T
J
MIN.
V
SS
-0.5
V
SS
-0.5
-65
-45
MAX.
4.6
V
DD
+0.5
V
DD
+0.5
150
85
125
2
UNITS
V
V
V
°C
°C
°C
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
2. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Rating
Interelectrode Capacitance
Crystal Pullability
Recommended ESR
SYMBOL
F
XIN
C
L (xtal)
C
0
C
0
/C
1 (xtal)
R
E
AT cut
AT cut
CONDITIONS
Parallel Fundamental Mode
Die at VCON = 1.65V
MIN.
100
TYP.
MAX.
200
UNITS
MHz
pF
5.0
3.5
350
30
pF
-
Ω
3. Voltage Control Crystal Oscillator
PARAMETERS
VCXO Stabilization Time
VCXO Tuning Range
CLK output pullability
On-chip Varicaps control range
Linearity
VCXO Tuning Characteristic
VCON input impedance
VCON modulation BW
0V
≤
VCON
≤
3.3V, -3dB
2000
25
75
SYMBOL
T
VCXOSTB
CONDITIONS
From power valid
XTAL C
0
/C
1
< 350
0V
≤
VCON
≤
3.3V
at room temperature
XTAL C
0
/C
1
= 350
VCON = 0 to 3.3V
MIN.
250
TYP.
MAX.
10
UNITS
ms
ppm
±120
3.3 – 8.8
5
ppm
pF
%
ppm/V
kΩ
kHz
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 05/19/05 Page 4