TIC236 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
I
L
dv/dt
dv/dt
(c)
di/dt
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
V
supply
= +12 V†
V
supply
= -12 V†
V
D
= Rated V
D
V
D
= Rated V
D
di/dt = 0.5 I
T(RMS)
/ms
V
D
= Rated V
D
di
G
/dt = 50 mA/µs
I
GT
= 50 mA
TEST CONDITIONS
(see Note 5)
I
G
= 0
T
C
= 110°C
T
C
= 80°C
I
T
= 1.4 I
T(RMS)
T
C
= 110°C
±1.2
±400
±9
±100
MIN
TYP
MAX
80
-80
UNIT
mA
V/µs
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω,
t
p(g)
= 20
µs,
t
r
=
≤
15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2
62.5
UNIT
°C/W
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
TC08AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
10
TC08AB
I
GT
- Gate Trigger Current - mA
100
V
GT
- Gate Trigger Voltage - V
10
1
1
V
supply
I
GTM
+
+
+
-
-
-
-
+
-40
-20
0
20
40
60
V
AA
= ± 12 V
R
L
= 10
Ω
t
p(g)
= 20 µs
80
100
120
V
supply
I
GTM
+
+
+
-
-
-
-
+
}
V
AA
= ± 12 V
R
L
= 10
Ω
t
p(g)
= 20 µs
0
20
40
60
80
100
120
0·1
-60
0·1
-60
-40
-20
T
C
- Case Temperature - °C
Figure 1.
T
C
- Case Temperature - °C
Figure 2.
PRODUCT
INFORMATION
2
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