TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
I
C
=
100 mA
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 0.5 A
I
C
=
I
C
=
2A
5A
(see Notes 3 and 4)
T
C
= 100°C
(see Notes 3 and 4)
T
C
= 100°C
f=
1 MHz
8
150
(see Notes 3 and 4)
15
T
C
= 100°C
T
C
= 100°C
(see Note 2)
TIPL765
TIPL765A
TIPL765
TIPL765A
TIPL765
TIPL765A
TIPL765
TIPL765A
MIN
400
450
50
50
200
200
50
50
1
60
0.5
1.0
2.5
5.0
1.1
1.3
1.7
1.6
MHz
pF
V
V
µA
mA
µA
TYP
MAX
UNIT
V
V
CE
= 850 V
I
CES
V
CE
= 1000 V
V
CE
= 850 V
V
CE
= 1000 V
I
CEO
I
EBO
h
FE
V
CE
= 400 V
V
CE
= 450 V
V
EB
=
V
CE
=
I
B
=
V
CE(sat)
I
B
=
I
B
=
I
B
=
I
B
=
V
BE(sat)
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
I
B
=
I
B
=
I
B
=
f
t
C
ob
V
CE
=
V
CB
=
10 V
5V
0.4 A
1A
2A
2A
0.4 A
1A
2A
2A
10 V
20 V
I
C
= 10 A
I
C
= 10 A
I
C
=
I
C
=
2A
5A
I
C
= 10 A
I
C
= 10 A
I
C
= 0.5 A
I
E
= 0
f = 0.1 MHz
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
Junction to case thermal resistance
MIN
TYP
MAX
1
UNIT
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
sv
t
rv
t
fi
t
ti
t
xo
t
sv
t
rv
t
fi
t
ti
t
xo
†
TEST CONDITIONS
†
MIN
TYP
MAX
2
300
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
Voltage storage time
Voltage rise time
Current fall time
Current tail time
Cross over time
Voltage storage time
Voltage rise time
Current fall time
Current tail time
Cross over time
I
C
= 10 A
V
BE(off)
= -5 V
I
B(on)
= 2 A
T
C
= 100°C
(see Figures 1 and 2)
I
C
= 10 A
V
BE(off)
= -5 V
I
B(on)
= 2 A
(see Figures 1 and 2)
200
50
400
3.5
400
300
80
500
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
