TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
100
V
CE
= 5 V
TCP765AE
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
TCP765AF
h
FE
- Typical DC Current Gain
T
C
= 125°C
T
C
= 25°C
T
C
= -65°C
4·0
I
C
= 1 A
I
C
= 2 A
I
C
= 5 A
I
C
= 10 A
T
C
= 25°C
3·0
10
2·0
1·0
1·0
0·1
1·0
I
C
- Collector Current - A
10
0
0·01
0·1
1·0
10
I
B
- Base Current - A
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
5·0
TCP765AJ
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·6
V
BE(sat)
- Base-Emitter Saturation Voltage - V
TCP765AG
4·0
I
C
= 1 A
I
C
= 2 A
I
C
= 5 A
I
C
= 10 A
T
C
= 100°C
1·4
3·0
1·2
2·0
1·0
1·0
0·8
I
C
= 10 A
I
C
= 5 A
I
C
= 2 A
I
C
= 1 A
0
0·5
1·0
I
B
- Base Current - A
1·5
2·0
0
0·01
0·6
0·1
1·0
10
I
B
- Base Current - A
Figure 5.
Figure 6.
PRODUCT
INFORMATION
4
POINN [ POWER INNOVATIONS LTD ]
