TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
description (continued)
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
RATING
Repetitive peak off-state voltage ( 0°C < T
J
<70°C)
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
I
TSM
I
TSP
120
80
70
60
50
38
50
50
45
35
4
6
6
250
-40 to +150
-40 to +150
A/µs
°C
°C
A rms
A
‘1072F3
‘1082F3
SYMBOL
V
DRM
VALUE
-58
-66
UNIT
V
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, 25°C (unless otherwise noted)
TISP1072F3
PARAMETER
Repetitive peak off-
state current
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
±10
±10
V
d
= 100 mV
D Package
P Package
SL Package
0.08
0.06
0.02
0.5
0.4
0.3
0.08
0.06
0.02
MIN
TISP1082F3
TYP
MAX
±10
±10
0.5
0.4
0.3
UNIT
I
DRM
I
D
C
off
NOTE
V
D
= ±V
DRM
, 0°C < T
J
<70°C
V
D
= ±50 V
f = 100 kHz,
V
D
= 0
(see Note 4)
µA
µA
pF
pF
pF
4: Further details on capacitance are given in the Applications Information section.
PRODUCT
INFORMATION
2
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