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CM100TU-12F 参数 Datasheet PDF下载

CM100TU-12F图片预览
型号: CM100TU-12F
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽栅设计六IGBTMOD⑩百安培/ 600伏 [Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 130 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
15
9.5
160
120
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25
o
C
11
10
2.5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
5
T
j
= 25°C
V
GE
= 20V
9
2.0
1.5
1.0
0.5
4
3
I
C
= 200A
80
40
8
7.5
8.5
2
1
I
C
= 100A
I
C
= 40A
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
40
80
120
160
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
V
GE
= 0V
C
ies
10
3
V
CC
= 300V
V
GE
=
±15V
t
d(off)
R
G
= 6.3
t
f
T
j
= 125°C
Inductive Load
t
d(on)
10
2
10
1
SWITCHING TIME, (ns)
10
2
10
1
10
0
C
oes
C
res
10
1
t
r
10
0
0
.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
2
REVERSE RECOVERY TIME, t
rr
, (ns)
10
2
t
rr
I
rr
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
10
-3
10
-2
10
-1
10
0
10
1
I
C
= 100A
16
12
8
4
V
CC
= 200V
V
CC
= 300V
10
0
Per Unit Base
R
th(j-c)
= 0.35°C/W (IGBT)
R
th(j-c)
= 0.7°C/W (FWDi)
Single Pulse
T
C
= 25°C
10
1
V
CC
= 300V
V
GE
=
±15V
R
G
= 6.3
T
j
= 25°C
Inductive Load
10
1
10
-1
10
-1
10
-2
10
-2
10
0
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
300
600
900
GATE CHARGE, Q
G
, (nC)
4