Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T
j
< 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM200TU-12F
-40 to 150
-40 to 125
600
±20
200
400*
200
400*
590
31
31
680
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 15V, T
j
= 25°C
I
C
= 200A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
I
E
= 200A, V
GE
= 0V
Min.
–
–
5
–
–
–
–
Typ.
–
–
6
1.6
1.6
1240
–
Max.
1
20
7
2.2
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
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