Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes/600 Volts
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 200A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1 ,
Inductive Load
Switching Operation
I
E
= 200A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
3.8
Max.
54
3.6
2
120
100
350
250
150
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
'Q
R
th(c-f)
Test Conditions
Per IGBT 1/6 Module, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per FWDi 1/6 Module, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per IGBT 1/6 Module,
T
c
Reference Point Under Chip
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.015
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
Typ.
Max.
0.21
Units
°C/W
°C/W
°C/W
–
–
0.35
–
0.13
3
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