Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-24H
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM400HA-24H
–40 to 150
–40 to 125
1200
Units
°C
Junction Temperature
T
j
Storage Temperature
T
°C
stg
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
V
CES
V
GES
Volts
±20
Volts
Collector Current
I
400
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
C
Peak Collector Current
I
I
800*
CM
Diode Forward Current
I
400
F
Diode Forward Surge Current
Power Dissipation
800*
FM
P
2800
d
Max. Mounting Torque M6 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
–
26
–
–
26
in-lb
400
Grams
Volts
V Isolation
V
2500
RMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
1.0
0.5
7.5
3.4**
–
Units
mA
Collector-Cutoff Current
Gate Leakage Current
I
V
V
= V
, V
CES GE
= 0V
= 0V
CES
GES
CE
I
= V
, V
GES CE
–
–
µA
GE
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
I
C
= 40mA, V
= 10V
= 15V
4.5
–
6.0
2.5
2.25
2000
–
Volts
Volts
Volts
nC
GE(th)
CE
GE
V
I = 400A, V
C
CE(sat)
I
= 400A, V
= 15V, T = 150°C
–
C
GE
j
Total Gate Charge
Q
V
= 600V, I = 400A, V
= 15V
–
–
G
CC
C
GS
Diode Forward Voltage
V
I
= 400A, V
= 0V
–
3.4
Volts
FM
E GS
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
80
Units
nF
nF
nF
ns
Input Capacitance
C
ies
Output Capacitance
Reverse Transfer Capacitance
C
oes
V
= 0V, V
GE CE
= 10V, f = 1MHz
–
–
28
C
–
–
16
res
Resistive
Load
Turn-on Delay Time
t
–
–
300
500
350
350
250
–
d(on)
Rise Time
t
r
V
CC
= 600V, I = 400A
–
–
ns
C
Switching
Times
Turn-off Delay Time
Fall Time
t
V
= V
= 15V, R = 0.78Ω
–
–
ns
d(off)
GE1
GE2
G
t
f
–
–
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
I
I
= 400A, di /dt = –800A/µs
–
–
ns
E
E
Q
= 400A, di /dt = –800A/µs
–
2.97
µC
rr
E
E
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Per IGBT
Min.
–
Typ.
–
Max.
0.045
0.09
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per FWDi
–
–
Per Module, Thermal Grease Applied
–
–
0.040
190
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