Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-24H
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
800
800
5
4
3
2
1
0
12
T = 25oC
V
= 15V
GE
V
= 10V
CE
j
15
T = 25°C
T = 25°C
j
j
T = 125°C
j
640
480
320
T = 125°C
j
640
480
320
160
0
V
= 20V
GE
11
10
9
160
0
7
8
0
4
8
12
16
20
0
2
4
6
8
10
0
160
320
480
640
800
GATE-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-CURRENT, I , (AMPERES)
GE
CE
C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
(TYPICAL)
CE
3
3
2
10
10
10
10
8
10
10
T = 25°C
j
T = 25°C
j
I
= 800A
C
C
ies
6
I
= 400A
C
2
4
C
oes
1
0
10
10
2
I
= 160A
16
V
= 0V
C
GE
C
res
f = 1MHz
1
0
-1
0
10
1
10
2
10
0
4
8
12
20
0
0.8
1.6
2.4
3.2
4.0
10
EMITTER-COLLECTOR VOLTAGE, V , (VOLTS)
GATE-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
EC
GE
CE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, V
GE
3
3
2
1
0
20
16
12
8
10
10
10
10
10
t
d(off)
I
= 400A
C
t
V
= 400V
CC
f
I
t
rr
rr
V
= 600V
CC
t
d(on)
2
10
2
10
V
V
R
= 600V
= ±15V
= 0.78Ω
CC
GE
t
r
4
di/dt = -800A/µsec
T = 25°C
j
G
T = 125°C
j
1
10
1
10
0
1
2
10
3
10
1
2
3
0
800
1600
2400
3200
10
10
10
10
GATE CHARGE, Q , (nC)
COLLECTOR CURRENT, I , (AMPERES)
EMITTER CURRENT, I , (AMPERES)
G
C
E
191
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
