MITSUBISHI GATE TURN-OFF THYRISTORS
FG3300AH-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
On-state voltage
Test conditions
Min
—
Typ
—
—
—
—
—
—
Max
3.0
300
150
300
—
VTM
IRRM
IDRM
IRG
Tj = 125°C, ITM = 3300A, Instantaneous measurment
Tj = 125°C, VRRM Applied
V
—
mA
mA
mA
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
—
—
dv/dt
tgt
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, VD = 1250V, VGK = –2V
Tj = 125°C, ITM = 3300A, IGM = 40A, VD = 1250V
1000
—
V/
µs
10
µs
T
j
= 125°C, ITM = 3300A, VDM = 1875V, diGQ/d
t = –40A/µs
tgq
Turn-off time
—
—
35
µs
VRG = 17V, CS = 6.0 F, LS = 0.2
µ
µH
IGQM
VGT
—
—
—
—
780
—
—
1.5
A
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
V
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
IGT
—
4000
0.015
mA
Rth(j-f)
Junction to fin
—
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE ON-STATE CURRENT
104
25
20
15
10
5
7
Tj = 125°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
100
2
3
5 7 101
2
3
5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7101
GATE CHARACTERISTICS
102
7
5
0.025
3
2
PFGM = 400W
VFGM = 10V
0.020
0.015
0.010
101
7
5
3
2
PFG(AV) = 100W
VGT = 1.5V
100
7
5
3
2
Tj = 25°C
0.005
0
IFGM = 100A
IGT = 4000mA
10–1
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
GATE CURRENT (mA)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
