MITSUBISHI GATE TURN-OFF THYRISTORS
FG3300AH-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
VS. TURN OFF CURRENT
(TYPICAL)
40
80
VD = 1250V
VDM = 1875V
IT = 3300A
35
70
VRG = 17V
CS = 6.0µF
30
60
tgq
LS = 0.2µH
Tj = 125°C
25
50
ts
20
40
VD = 1250V
VDM = 1875V
diGQ/dt = –40A/µs
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
15
30
20
10
0
tgq
ts
10
5
0
0
1000
2000
3000
4000
0
10 20 30 40 50 60 70 80
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1600
1400
1200
1000
800
600
400
200
0
1000
VD = 1250V
VDM = 1875V
diGQ/dt = –40A/µs
VRG = 17V
CS = 6.0µF
LS = 0.2µH
900
800
Tj = 125°C
VD = 1250V
VDM = 1875V
IT = 3300A
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
700
600
500
0
1000
2000
3000
4000
20
30
40
50
60
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
8
VD = 1250V
IGM = 40A
diG/dt = 10A/µs
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
7
6
6.0µF
CS = 4.0µF 5.0µF
5
4
diT/dt = 500A/µs
3
VD = 1250V
VDM = 1875V
diGQ/dt = –40A/µs
300A/µs
100A/µs
2
VRG = 17V
LS = 0.2µH
Tj = 125°C
1
0
0
1000 2000 3000 4000 5000
TURN ON CURRENT (A)
0
1000
2000
3000
4000
TURN OFF CURRENT (A)
Aug.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
