MITSUBISHI Nch POWER MOSFET
FK14VS-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
450
±30
—
—
2
—
—
4.5
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
0.50
3.50
7.0
1500
180
30
30
50
130
50
1.5
—
—
Max.
—
—
±10
1
4
0.65
4.55
—
—
—
—
—
—
—
—
2.0
0.83
150
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 200V, I
D
= 7A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 7A, V
GS
= 0V
Channel to case
I
S
= 14A, d
is
/d
t
= –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
tw=10µs
100µs
1ms
10ms
DC
T
C
= 25°C
Single Pulse
160
120
80
40
0
0
50
100
150
200
10
–1
7
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
CASE TEMPERATURE T
C
(°C)
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
