MITSUBISHI Nch POWER MOSFET
FK14VS-9
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
50
P
D
= 150W
20
T
C
= 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
=20V 10V
6V
T
C
= 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
40
V
GS
= 20V
10V
6V
20
5V
10
4V
0
0
10
20
30
40
50
16
30
12
5V
8
P
D
= 150W
4
4V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
T
C
= 25°C
Pulse Test
1.6
T
C
= 25°C
Pulse Test
32
24
1.2
16
I
D
= 20A
14A
7A
0.8
V
GS
= 10V
20V
8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
2
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
T
C
=25°C
V
DS
= 10V
Pulse Test
75°C
125°C
DRAIN CURRENT I
D
(A)
32
24
3
2
10
1
7
5
3
2
10
0 0
10
2 3
16
8
0
0
4
8
12
16
20
5 7 10
1
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
