MITSUBISHI Nch POWER MOSFET
FS22SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
450
±30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 11A, VGS = 10V
ID = 11A, VGS = 10V
ID = 11A, VDS = 10V
—
—
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
—
0.19
2.1
10.0
2800
300
60
0.24
2.6
—
Ω
—
V
7.0
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
60
—
Rise time
—
80
—
VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
270
80
—
Fall time
—
—
IS = 11A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.5
—
2.0
0.45
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
300
250
200
150
100
50
102
7
tw=10µs
5
3
100µs
1ms
2
101
7
5
3
2
10ms
100
7
100ms
DC
5
TC = 25°C
Single Pulse
3
2
10–1
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
20
16
12
8
PD =
PD = 275W
VGS =
20V
10V
8V
VGS = 20V
6V
275W
10V
8V
TC = 25°C
Pulse Test
6V
5V
4
5V
TC = 25°C
Pulse Test
0
0
10
20
30
40
50
0
4
8
12
16 20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
