MITSUBISHI Nch POWER MOSFET
FS22SM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
0.5
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
T
C
= 25°C
Pulse Test
0.4
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
32
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
24
0.3
V
GS
= 10V
20V
16
I
D
= 40A
30A
20A
10A
0.2
8
0.1
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7 V
DS
= 10V
Pulse Test
5
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
32
24
3
2
10
1
7
5
3
2
10
0 0
10
2 3
T
C
= 25°C
75°C
150°C
16
8
0
0
4
8
12
16
20
5 7 10
1
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
10
3
7
5
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
3
7
5
3
2
Ciss
t
d(off)
3
2
10
2
t
f
7 t
d(on)
5
t
r
3
2
10
1
10
0
2 3
Coss
10
2
7
5 Tch = 25°C
Crss
f = 1MHz
3 V
GS
= 0V
2
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
5 7 10
1
2 3
5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
