MITSUBISHI Nch POWER MOSFET
FS30KMH-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±10V,
V
DS
= 0V
V
DS
= 100V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 4V
I
D
= 15A, V
GS
= 2.5V
I
D
= 15A, V
GS
= 4V
I
D
= 15A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
100
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
0.9
66
69
0.99
31
2000
230
120
33
135
170
170
1.0
—
95
Max.
—
±0.1
0.1
1.2
93
97
1.40
—
—
—
—
—
—
—
—
1.5
5.00
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 50V, I
D
= 15A, V
GS
= 4V, R
GEN
= R
GS
= 50Ω
I
S
= 15A, V
GS
= 0V
Channel to case
I
S
= 30A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
40
30
tw = 10ms
20
100ms
1ms
T
C
= 25°C
Single Pulse
DC
10ms
10
0
0
50
100
150
200
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
T
C
= 25°C
Pulse Test
V
GS
= 5V
4V
3V
20
T
C
= 25°C
Pulse Test
V
GS
= 5V
2V
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
40
16
4V
3V
2.5V
30
2.5V
12
P
D
= 25W
20
2V
8
1.5V
10
P
D
= 25W
1.5V
4
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
