MITSUBISHI Nch POWER MOSFET
FS30KMH-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
5.0
Tch = 25°C
I
D
= 30A
SOURCE CURRENT I
S
(A)
4.0
40
3.0
V
DS
= 20V
50V
80V
30
T
C
= 125°C
2.0
20
75°C
25°C
1.0
10
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
V
GS
= 4V
I
D
= 1/2I
D
5
Pulse Test
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
2.0
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
1.6
1.2
0.8
0.4
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
D = 1.0
5
3
0.5
2
0.2
1.2
1.0
0.8
10
0
0.1
7
5
3
2
10
–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
