MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
—
±0.1
0.1
2.0
19
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
15
mΩ
mΩ
V
21
35
Drain-source on-state voltage ID = 25A, VGS = 10V
0.375
28
0.475
—
ID = 25A, VDS = 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
S
Ciss
1600
500
260
17
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
td (on)
tr
—
90
—
ns
VDD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
130
125
1.0
—
—
ns
—
ns
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 25A, VGS = 0V
Channel to case
1.5
3.57
—
V
Rth (ch-c)
trr
°C/W
ns
IS = 25A, dis/dt = –50A/µs
60
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
3
2
102
7
tw = 10ms
5
3
2
100ms
1ms
101
7
5
3
2
10ms
T
C
= 25°C
Single Pulse
DC
100
7
5
3
2 3
0
50
100
150
200
3
5 7100 2 3 5 7101 2 3 5 7102
DRAIN-SOURCE VOLTAGE DS (V)
CASE TEMPERATURE
T
C
(°C)
V
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
50
40
30
20
10
0
PD
= 35W
T
C
= 25°C
T
C
= 25°C
4V
5V
V
GS = 10V
Pulse Test
Pulse Test
5V
V
GS = 10V
6V
3V
4V
PD
= 35W
2V
3V
2V
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
