MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
50
40
30
20
10
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
V
GS = 4V
I
D
= 80A
50A
10V
30A
0
0
3
2
4
6
8
10
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
102
7
T
V
C
= 25°C
DS = 10V
Pulse Test
VDS = 10V
Pulse Test
5
4
TC = 25°C
3
2
75°C
125°C
101
7
5
4
3
2
100
2
4
6
8
10
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
Tch = 25°C
f = 1MH
GS = 0V
Tch = 25°C
DD = 15V
GS = 10V
104
7
Z
V
V
R
5
V
4
5
3
2
GEN = RGS = 50Ω
3
2
Ciss
t
d(off)
103
7
102
7
t
t
f
Coss
Crss
5
3
2
5
r
4
102
7
3
2
t
d(on)
5
3
2
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
ID (A)
V
DRAIN CURRENT
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
