MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –2A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –5V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
Ω
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
15
—
Rise time
—
33
—
VDD = –15V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
49
—
Fall time
—
26
—
IS = –10A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.0
—
–1.5
6.25
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –10A, dis/dt = 50A/µs
Reverse recovery time
—
50
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–2
40
32
24
16
8
–102
–7
–5
tw = 10µs
–3
–2
100µs
–101
–7
–5
1ms
–3
–2
10ms
DC
TC = 25°C
Pulse Set
–100
–7
–5
–3
–2–2
0
0
50
100
150
200
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
–10
–8
–6
–4
–2
0
PD =
20W
–7V
–8V
VGS =
–10V
VGS = –10V
Tc = 25°C
–8V –6V
–6V
–5V
Tc = 25°C
Pulse Test
Pulse Test
–5V
–4V
–4V
–4
–3V
–3V
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
