MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–5.0
–4.0
–3.0
–2.0
–1.0
0
0.40
0.32
0.24
0.16
0.08
0
Tc = 25°C
Pulse Test
VGS = –4V
Tc = 25°C
Pulse Test
–10V
ID = –20A
–10A
–5A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5–7–101 –2 –3 –5 –7–102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
101
7
Tc = 25°C
VDS = –10V
Pulse Test
5
4
3
125°C
75°C
2
TC = 25°C
100
7
5
4
3
VDS = –5V
Pulse Test
–4
2
0
10–1
0
–2
–4
–6
–8
–10
–3 –5 –7 –100
–2 –3 –5 –7 –101
–2 –3
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
104
7
5
5
Tch = 25°C
f = 1MHZ
VGS = 0V
3
2
3
2
102
7
td(off)
tr
Ciss
103
7
5
5
tf
3
2
3
2
101
7
5
td(on)
Coss
Crss
102
7
5
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
3
2
3
2
100
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
