PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
Tc = 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–5.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
–4.0
0.4
V
GS
= –4V
–3.0
I
D
= –12A
0.3
–2.0
0.2
–10V
–1.0
–6A
–3A
0.1
0
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
DRAIN CURRENT I
D
(A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
V
DS
= –10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
1
7
5
125°C
T
C
=
25°C
75°C
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–16
3
2
–12
10
0
7
5
3
2
V
DS
= –5V
Pulse Test
–8
–4
0
0
–2
–4
–6
–8
–10
10
–1 –1
–10
–2 –3
–5 –7
–10
0
–2 –3
–5 –7
–10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
Tch = 25°C
V
GS
= –10V
V
DD
= –30V
R
GEN
= R
GS
= 50Ω
10
4
7
5
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
2
7
5
4
3
2
t
d(off)
10
3
7
5
3
2
Ciss
t
f
t
r
t
d(on)
Coss
Crss
10
2
7
5
10
1
7
5
4
3
–5–7
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5
3
2
–3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2 –3
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
