PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
–10
Tch = 25°C
I
D
= –6A
SOURCE CURRENT I
S
(A)
–8
V
DS
=
–10V
–16
T
C
= 125°C
75°C
25°C
–6
–20V
–40V
–12
–4
–8
–2
–4
0
0
4
8
12
16
20
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
–4.0
7
5
4
3
2
V
GS
= –10V
I
D
= 1/2I
D
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= –10V
I
D
= –1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
–3.2
–2.4
10
0
7
5
4
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
1.2
10
1
7
5 D = 1.0
3 0.5
2
0.2
1.0
0.8
P
DM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D
=
tw
T
10
0
7
5
3
2
0.6
0.4
–50
0
50
100
150
10
–1 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
Jan.1999
CHANNEL TEMPERATURE Tch (°C)
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
