MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–5.0
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
V
GS
= –4V
–4.0
160
–3.0
120
–2.0
I
D
= –24A
80
–10V
–1.0
–6A
–3A
–10A
40
0
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5
DRAIN CURRENT I
D
(A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
V
DS
= –10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
2
7
5
V
DS
= 10V
Pulse Test
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–16
3
2
Tc =25°C 75°C 125°C
–12
10
1
7
5
3
2
V
DS
= –10V
Pulse Test
–8
–4
0
0
–2
–4
–6
–8
–10
10
0
–5 –7
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
Ciss
3
2
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
CAPACITANCE
Ciss, Coss, Crss (pF)
10
3
7
5
3
2
Coss
Crss
SWITCHING TIME (ns)
10
0
7
5
3
2
t
f
t
r
t
d(on)
10
–1
7
5
3
2
Tch = 25°C
V
DD
= –15V
V
GS
= –10V
R
GEN
= R
GS
= 50Ω
10
2
7
5
3
2
V
GS
= 0V
f = 1MH
Z
Tch = 25°C
–5–7
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3
10
–2 0
–10
–2 –3
–5 –7
–10
1
–2 –3
–5
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
