MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
Tch = 25°C
Pulse Test
ID = –3A
VGS = 0V
Pulse Test
Tc = 25°C
75°C
VDS =
–10V
125°C
–20V
–25V
–4
0
0
8
16
24
32
40
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–2.0
–1.6
–1.2
–0.8
–0.4
0
VGS = –10V
ID = –3A
Pulse Test
VDS = –10V
ID = –1mA
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 0V
ID = –1mA
D = 1.0
5
3
0.5
2
101
7
0.2
0.1
5
3
0.05
2
PDM
100
7
tw
5
0.02
0.01
Single Pulse
3
T
2
tw
T
D=
10–1
7
5
3
2
10–2
10–4 23 5710–3 23 5710–2 23 5710–1 23 57100 23 57101 23 57102 23 57103
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
