PSBT 50
Symbol
I
D
, I
R
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
Characteristic Value
5
1.64
0.85
11
1.5
1.6
100
200
0.2
5
450
200
2
250
0.9
0.225
1.1
0.275
16.0
7.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= T
VJM
, V
R
= V
RRM
, V
D
= V
DRM
≤
I
T
, I
F
= 80A, T
VJ
= 25°C
≤
For power-loss calculations only (T
VJ
= T
VJM
)
V
D
= 6V
V
D
= 6V
T
VJ
= T
VJM
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
≤
≤
≤
≤
≤
≤
≤
≤
≤
T
VJ
= 25°C, t
P
= 10µs
I
G
= 0.45A, di
G
/dt = 0.45A/µs
T
VJ
= 25°C, V
D
= 6V, R
GK
=
∞
T
VJ
= 25°C, V
D
= �½ V
DRM
I
G
= 0.45A, di
G
/dt = 0.45A/µs
T
VJ
= T
VJM
, I
T
= 20A, t
P
= 200µs, V
R
= 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, V
D
= 2/3 V
DRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
200
T
[A]
150
1:T
VJ
= 25°C
VJ
=25°C
IF(OV)
------
IFSM
us
IFSM (A)
TVJ=45°C
TVJ=150°C
550
490
2:T VJ = 125°C
100
1.6
1.4
1.2
1
10
100
1
tgd
2
0 VRRM
50
IF
0
0.5
1
1.5
2
VF [V]
1
10
100
I [mA]
G
1000
0.8
1/2 VRRM
0.6
0.4
0
10
1 VRRM
1
2
10 t[ms] 10
3
10
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) I
FSM
,
I
TSM
: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003
POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
