PSBT 50
10
V
70
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10W
6
[A]
60
50
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
1
30
5
4
V
G
20
10
ITAV
0
50
100
TC (°C)
150
200
2
1
3
0.1
10
0
10
1
I
G
10
2
10
3
mA
10
4
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Z
thJK
Z thJC
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
ITAVM
30
0
50
[A]
1.02
110
115
80
PSBT 50
0.28 0.15
0.4
= RTHCA [K/W]
TC
85
90
95
0.61
100
105
2.27
120
°C
125
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003
POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
