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PSHI25-06 参数 Datasheet PDF下载

PSHI25-06图片预览
型号: PSHI25-06
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块的H桥配置 [IGBT Module H-Bridge Configuration]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 132 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSHI25-06的Datasheet PDF文件第1页浏览型号PSHI25-06的Datasheet PDF文件第2页浏览型号PSHI25-06的Datasheet PDF文件第4页  
PSHI 25/06
50
A
I
C
50
A
40
30
11V
T
J
= 25°C
V
GE
= 17V
15V
13V
40
30
20
10
9V
V
GE
= 17V
15V
13V
I
C
20
10
14T60
11V
T
J
= 125°C
9V
14T60
0
0
0
1
2
3
V
CE
4
V
5
0
1
2
3
V
CE
4
V
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A
50
A
40
30
T
J
= 125°C
T
J
= 25°C
40
I
C
I
F
30
20
V
CE
= 20V
20
10
T
J
= 125°C
T
J
= 25°C
14T60
10
0
0
14T60
4
6
8
10
12
V
GE
14
V
16
0
1
2
V
F
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
40
A
t
rr
20
V
V
GE
15
120
ns
30
V
CE
= 300V
I
C
= 15A
90
T
J
= 125°C
V
R
= 300V
I
F
= 15A
I
RM
10
20
60
5
14T60
10
I
RM
14T60
30
0
0
80
0
20
40
60
Q
G
nC
0
200
400
600
-di/dt
800
A/µs
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20