PE426482
SP8T RF Switch
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE426482
Parameter/Condition
Min
Max
Unit
Supply voltage, VDD
–0.3
–0.3
5.5
3.6
V
V
Digital input voltage (V1, V2, V3, V4, LS)
RF input power (RFC–RFX, 50Ω)
See Figure 2
See Figure 2
+150
dBm
dBm
°C
RF input power into terminated ports, CW(1) (RFX, 50Ω)
Maximum junction temperature
Storage temperature range
–65
+150
°C
ESD voltage HBM, all pins(2)
ESD voltage CDM, all pins(3)
1000
V
1000
V
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Human body model (MIL-STD 883 Method 3015).
3) Charged device model (JEDEC JESD22-C101).
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