P4C116/P4C116L
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
–0.5 to +7
–0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
–55 to +125
–65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING CONDITIONS
Grade
Military
(2)
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd
0V
0V
Vcc
5.0V ±10%
5.0V ±10%
Commercial
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
I
SB
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage V
CC
= Min., I
IN
= –18 mA
Output Low Voltage
I
OL
= +8 mA, V
CC
= Min.
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
CC
= Max.,
CE
= V
IH
,
V
OUT
= GND to V
CC
CE
≥
V
IH,
V
CC
= Max,
CE
≥
V
HC
,
V
CC
= Max,
f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
f = Max., Outputs Open
Mil.
Ind./Com’l.
___
___
15
10
___
___
1
n/a
mA
Mil.
Com’l.
Mil.
Com’l.
Mil.
Ind./Com’l.
2.4
–10
–5
–10
–5
___
___
+10
+5
+10
+5
30
20
Test Conditions
P4C116
Min
Max
2.2
–0.5
(3)
–0.5
(3)
V
CC
+0.5
0.8
0.2
–1.2
0.4
2.4
–5
n/a
–5
n/a
___
___
+5
n/a
+5
n/a
20
n/a
P4C116L
Min
Max
2.2
–0.5
(3)
–0.5
(3)
V
CC
+0.5
0.8
0.2
–1.2
0.4
Unit
V
V
V
V
V
V
V
µA
µA
mA
V
CC
–0.2 V
CC
+0.5 V
CC
–0.2 V
CC
+0.5
I
SB1
Standby Power Supply
Current
(CMOS Input Levels)
n/a = Not Applicable
Document #
SRAM110
REV A
Page 2 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
