P4C198/198L, P4C198A/198AL
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Temperature
Symbol
Parameter
Unit
Range
–10 –12 –15 –20 –25 –35 –45
180 170 160 155 150 N/A N/A
Commercial
mA
Dynamic Operating Current*
ICC
N/A 180 170 160 155 150 N/A mA
N/A N/A 170 160 155 150 145 mA
Industrial
Military
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
198: CE = VIL, OE = VIH
198A: CE1 = VIL, CE2 = VIL. OE = VIH
DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)
Typ.*
VCC=
Max
2.0VCC 3.0V
Symbol
Parameter
Test Condition
Min
V =
Unit
2.0V
3.0V
VDR
ICCDR
VCC for Data Retention
Data Retention Current
2.0
V
µA
10
15
600
900
tCDR
Chip Deselect to
CE ≥VCC – 0.2V,
VIN ≥ VCC – 0.2V or
VIN ≤ 0.2V
0
ns
ns
Data Retention Time
†
§
tR
Operation Recovery Time
tRC
*TA = +25°C
§
tRC = Read Cycle Time
†
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document # SRAM113 REV A
Page 3 of 13
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