P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-10
-12
-15
-20
-25
-35
-45
Sym.
Parameter
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC Read Cycle Time 10
tAA Address Access
Time
tAC Chip Enable
Access Time
12
15
20
25
35
45
ns
ns
10
10
12
12
15
15
20
20
25
25
35
35
45
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
tOH Output Hold from
Address Change
tLZ Chip Enable to
Output in Low Z
2
2
2
2
2
2
2
2
2
2
2
2
2
2
tHZ Chip Disable to
Output in High Z
tOE Output Enable
Low to Data Valid
6
6
7
7
8
9
10
12
10
15
14
25
15
30
tOLZ Output Enable to
Output in Low Z
tOHZ Output Disable to
Output in High Z
tPU Chip Enable to
Power Up Time
2
0
2
0
2
0
2
0
2
0
2
0
2
0
6
7
9
9
10
25
14
35
15
45
tPD Chip Disable to
Power Down Time
10
12
15
20
READ CYCLE NO.1 (OE controlled)(5)
Notes:
5. WE is HIGH for READ cycle.
Document # SRAM113 REV A
Page 4 of 13
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