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P4C198-12CMB 参数 Datasheet PDF下载

P4C198-12CMB图片预览
型号: P4C198-12CMB
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速16K ×4的静态CMOS RAMS [ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS]
分类和应用:
文件页数/大小: 13 页 / 232 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C198-12CMB的Datasheet PDF文件第1页浏览型号P4C198-12CMB的Datasheet PDF文件第2页浏览型号P4C198-12CMB的Datasheet PDF文件第3页浏览型号P4C198-12CMB的Datasheet PDF文件第4页浏览型号P4C198-12CMB的Datasheet PDF文件第6页浏览型号P4C198-12CMB的Datasheet PDF文件第7页浏览型号P4C198-12CMB的Datasheet PDF文件第8页浏览型号P4C198-12CMB的Datasheet PDF文件第9页  
P4C198/198L, P4C198A/198AL  
READ CYCLE NO. 2 (ADDRESS Controlled)(5,6)  
READ CYCLE NO. 3 (CE(12) Controlled)(5,7,8)  
Notes:  
10. Read Cycle Time is measured from the last valid address  
to the first transitioning address.  
6. CE (CE1 CE2 for P4C198A/L) and OE are LOW READ cycle.  
7. OE is LOW for the cycle.  
11. Transitions caused by a chip enable control have similar  
delays irrespective of whether CE1 or CE2 causes them  
(P4C198A/L).  
8. ADDRESS must be valid prior to, or coincident with CE (CE1  
and CE2 for P4C198A/L) transition LOW.  
9. Transition is measured ± 200mV from steady state voltage  
prior to change, with loading as specified in Figure 1.  
12. CE1, CE2 for P4C198A/L.  
Document # SRAM113 REV A  
Page 5 of 13