P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-10
-12
-15
-20
-25
-35
-45
Sym.
Parameter
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time 10
12
8
13
10
15
15
20
20
30
30
40
35
ns
ns
tCW Chip Enable Time
to End of Write
7
8
0
8
0
tAW Address Valid to
End of Write
8
0
9
0
10
0
15
0
20
0
25
0
35
0
ns
ns
ns
ns
tAS Address Set-up
Time
tWP Write Pulse
Width
10
0
12
0
20
0
25
0
35
0
tAH Address Hold
Time from End
of Write
tDW Data Valid to End
of Write
tDH Data Hold Time
tWZ Write Enable to
Output in High Z
7
0
6
0
7
0
10
0
13
0
15
0
20
0
ns
ns
ns
7
6
7
8
10
10
15
tOW Output Active
from End of Write
3
3
3
3
3
3
3
ns
WRITE CYCLE NO. 1 (With OE high)
Document # SRAM113 REV A
Page 6 of 13
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
