P4C422
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10% except as noted, All Temperature Ranges)(2)
-15
-20
-25
-35
-10*
-12
Parameter
Write Cycle Time(5)
Sym.
Unit
Min
Max Min Max
Max
Min Max
Min
Max
Min Max Min
tWC
tZWS
tWR
10
12
15
25
35
20
ns
ns
Write Enable to High-Z (6)
8
15
12
30
25
10
10
20
20
15
12
Write Recovery Time
8
ns
ns
ns
ns
ns
ns
ns
ns
Write Pulse Width (5,7)
tW
8
0
9
0
11
0
13
2
15
5
20
5
Data Setup Time Prior to Write (5)
Data Hold Time (5)
tWSD
tWHD
tWSA
tWHA
2
0
2
0
2
2
0
4
0
2
5
2
0
2
0
2
5
5
5
5
5
5
Address Setup Time (5,7)
Address Hold Time(5)
2
5
5
5
Chip Select Setup Time (5)
Chip Select Hold Time(5)
2
5
tWSCS
tWHCS
5
5
*VCC = 5V ± 5%
TIMING WAVEFORM OF WRITE CYCLE
Document # SRAM101 REV. A
Page 4 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
