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P93U422-35FMB 参数 Datasheet PDF下载

P93U422-35FMB图片预览
型号: P93U422-35FMB
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH SPEED 256 ×4的静态CMOS RAM [HIGH SPEED 256 x 4 STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 217 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P93U422
Notes:
5) Test conditions assume signal transition times of 10 ns or less.
6) Extended temperature operation guaranteed with 400 linear feet per minute of air flow.
7) t
PLH(A)
and t
PHL(A)
are tested with S
1
closed and C
L
= 15 pF with both input and output timing referenced to 1.5V
8) t
PZH
(WE), t
PZH
(CS
1
, CS
2
) and t
PZH
(OE) are measured with S
1
open, C
L
= 15 pF and with both the input and output timing
referenced to 1.5V. t
PZL
(WE), t
PZL
(CS
1
, CS
2
) and t
PZL
(OE) are measured with S
1
closed, C
L
= 15pF and with both the input and
output timing referenced to 1.5V.
t
PHZ
(WE), t
PHZ
(CS
1
, CS
2
) and t
PHZ
(OE) are measured with S
1
open, C
L
< 5pF and are measured between the 1.5V level
input to the V
OH
-500mV level on the output.
t
PLZ
(WE), t
PLZ
(CS
1
, CS
2
) and t
PLZ
(OE) are measured with S
1
closed, C
L
< 5pF and are measured between the 1.5V level
input to the V
OL
+500mV level on the output.
on the
on the
SWITCHING TEST
Test Circuits (7, 8)
Document #
SRAM102
REV A
Page 4 of 10