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PY291A-35WM 参数 Datasheet PDF下载

PY291A-35WM图片预览
型号: PY291A-35WM
PDF下载: 下载PDF文件 查看货源
内容描述: 2K ×8可重复编程的PROM [2K X 8 REPROGRAMMABLE PROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 9 页 / 101 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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PY291A
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Symbol
t
AA
t
HZCS1
t
ACS1
t
HZCS2
t
ACS2
t
PU
t
PD
Parameter
Address to Output Valid
Chip Select Inactive to High Z
Chip Select Active to Output Valid
Chip Select Inactive to High Z
Chip Select Active to Output Valid
Chip Select Active to Power-Up
Chip Slect Inactive to Power-Down
0
22
-20
Min Max
20
15
15
22
22
0
27
-25
Min Max
25
15
15
27
27
0
35
-35
Min Max
35
20
20
35
35
0
45
-50
Min Max
50
20
20
45
45
Unit
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
and I
IL
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Document #
EPROM101
REV OR
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