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PY291A-35WM 参数 Datasheet PDF下载

PY291A-35WM图片预览
型号: PY291A-35WM
PDF下载: 下载PDF文件 查看货源
内容描述: 2K ×8可重复编程的PROM [2K X 8 REPROGRAMMABLE PROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 9 页 / 101 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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PY291A
DEVICE ERASURE
If the device is subjected to wavelengths of light below
4000 Angstroms, device erasure will commence. It is
therefore recommended to use an opaque label over the
window in the event the device will be exposed to lighting
for a long time. The UV dose for erasure requires a
wavelength of 2,537 Angstroms for a minimum dose of
25 Wsec/cm
2
. If using a UV lamp of 12 mW/cm
2
, the
exposure time is estimated to be 35 minutes. Devices
should be positioned within 1 inch of the lamp during the
erasure process. Permanent damage can occur to the
devices if exposed to UV light for an extended period of
time.
MODE SELECTION
Pin Function
Read or Output Disable
Mode
Other
Read
Output Disable
Output Disable
Output Disable
Program
Program Verify
Program Inhibit
Intelligent Program
Blank Check Zeros
X = Don't Care
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
A
10
-A
0
CS
3
PGM
V
IH
X
X
V
IL
V
ILP
V
IHP
V
IHP
V
ILP
V
IHP
CS
2
VFY
V
IH
X
V
IL
X
V
IHP
V
ILP
V
IHP
V
IHP
V
ILP
CS
1
V
PP
V
IL
V
IH
X
X
V
PP
V
PP
V
PP
V
PP
V
PP
O
7
-O
0
D
7
-D
0
O
7
-O
0
High Z
High Z
High Z
D
7
-D
0
O
7
-O
0
High Z
D
7
-D
0
Zeros
PROGRAMMING PINOUTS
Document #
EPROM101
REV OR
Page 4 of 9